Scia Systems – Ion Beam Etching Systems – scia Mill 150 et 200
The scia Mill 150 is designed for highly uniform Ion Beam Etching and Milling of single substrates up to 150 mm diameter. Carriers or wafers are loaded via an automatic handling system. The substrate holder has helium backside cooling and can be tilted and rotated. Typical applications are the structuring of metal films for MEMS and sensors.
The scia Mill 200 is designed for highly uniform Ion Beam Etching and Milling of wafers up to 200 mm diameter. Carriers or wafers are loaded via an automatic handling system.
Available Models
Technical Specifications
| Substrate Holder | Water cooled, helium backside cooling contact, Substrate rotation 5 to 20 rpm, Tiltable in-situ from 0° till 160° in 0.1° steps |
| Ion Beam Source | Circular microwave ECR-source MW218‑e |
|---|---|
| Neutralizer | Triple plasma bridge neutralizer N-3DC |
| Typical removal rates | SiO2: 20 nm/min; TiW: 12 nm/min; Cu: 24 nm/min |
| Uniformity variation | ≤ 1.0 % |
| Base pressure | < 1 x 10-6 mbar |
| System dimensions (W x D x H) | 1.70 m x 1.70 m x 1.70 m (without electrical rack) |
| Tool configurations | 1 process chamber, 1 load-lock optional |
| Software interfaces | SECS II / GEM |
The scia Mill 150 is designed for highly uniform Ion Beam Etching and Milling of single substrates up to 150 mm diameter. Carriers or wafers are loaded via an automatic handling system. The substrate holder has helium backside cooling and can be tilted and rotated. Typical applications are the structuring of metal films for MEMS and sensors.
The scia Mill 150 can be used for Ion Beam Etching (IBE) with inert gases. Additionally the system can be applied for Reactive Ion Beam Etching (RIBE) as well as for Chemically Assisted Ion Beam Etching (CAIBE).
The systems are especially appropriate for research and development and low volume production.
Technical Specifications
| Substrate Diameter | Up to 200 mm |
| Substrate Holder | Water cooled, helium backside cooling contact, Substrate rotation 5 to 20 rpm, Tiltable in-situ from 0° till 170° in 0.1° steps |
|---|---|
| Ion Beam Source | Circular RF ion beam source RF350‑e |
| Neutralizer | Plasma bridge neutralizer N‑RF |
| Typical removal rates | SiO2: 20 nm/min; TiW: 12 nm/min; Cu: 24 nm/min |
| Uniformity variation | ≤ 2.0 % |
| Base pressure | < 1 x 10-6 mbar |
| System dimensions (W x D x H) | 2.70 m x 1.50 m x 2.40 m (without electrical rack and pumps) |
| Tool configurations | Single wafer load-lock, Cluster system with cassette handling |
| Software interfaces | SECS II / GEM |
The scia Mill 200 is designed for highly uniform Ion Beam Etching and Milling of wafers up to 200 mm diameter. Carriers or wafers are loaded via an automatic handling system.
A typical application is structuring of complex multilayers of materials with very low contamination. For that reason a SIMS end point detection system can be integrated for recognition of etched species and a defined etch stop.
The scia Mill 200 can be used for Ion Beam Etching (IBE) with inert gases, Reactive Ion Beam Etching (RIBE) as well as Chemically Assisted Ion Beam Etching (CAIBE). The system can be upgraded for Dual Ion Beam Deposition (DIBD), with an additional ion beam sputter source RF120‑e and a target holder.
Cluster tools for high volume production with three process chambers and two cassette load-locks are available.
Key Industries
- Semiconductor, Solar & Electronics
Brand
Manufacturer of advanced ion beam and plasma processing systems, scia Systems established itself in a very short time on the worldwide market. Products are dedicated to the industry of Microelectronics, MEMS and precision optical manufacturing : etching, trimming, sputtering systems.
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